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oxygen plasma in Chinese

Pronunciation:
How to pronounce "oxygen plasma""oxygen plasma" in a sentence

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  • 氧等離子體

Examples

  • Influence of in - situ oxygen plasma processing on the resistivity of diamond thin film
    原位氧等離子體處理對金剛石薄膜電阻率的影響
  • Found that antistatic property of flock fabric was increased when the flock was treated by oxygen plasma
    實(shí)驗(yàn)表明經(jīng)氧等離子處理的絨毛制得的植絨織物其抗靜電性能提高。
  • In order to modify wool fabrics properties , low - temperature oxygen plasma is used to treat wool fabric
    摘要為了改善羊毛織物的氈縮、潤濕等性能，采用低溫氧等離子體對羊毛織物進(jìn)行改性處理。
  • To approach as a resist in dry etching processing , etching properties of the films in oxygen plasma have been investigated
    為了探索該種薄膜在干刻蝕工藝過程中用作掩膜的可能性，還研究了它在氧離子體中的刻蝕性能。
  • On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
    另一方面,氧等離子體處理使ito薄膜表面的富sn氧化物進(jìn)一步氧化,形成穩(wěn)定的sno ,減少了ito薄膜表面的氧空位和sn ~ ( 4 + )數(shù)量,使其功函數(shù)增大。
  • It is found that ito surface roughness decreased after oxygen plasma treatment , which can improve its wetting performance and consequently improve the film performance
    經(jīng)氧等離子體處理后, ito薄膜的表面粗糙度減小,平整度提高,提高了ito薄膜表面的潤濕性能,改善了有機(jī)物在其表面的成膜性能。
  • The experiment result shows that with low - temperature oxygen plasma treatment , fabric ' s shrinkage and wettability have bettered a great deal , and fabric ' s breaking strength and breaking elongation is also increased in given condition
    有效控制處理?xiàng)l件，織物的斷裂強(qiáng)力和伸長率不但不會減小，反而可以得到一定程度的增強(qiáng)。
  • The results show that amorphous carbon films have high etching resistance against oxygen plasma , and etch rates of the films correlated not only with etching processing parameters , also with deposition conditions
    結(jié)果表明非晶碳膜對于氧離子體具有高的抗刻蝕性，其刻蝕率不僅與刻蝕的過程參量有關(guān)，而且決定于膜的沉積條件。
  • In the present work , water plasma ion implantation , instead of the conventional oxygen plasma ion implantation , has been employed to fabricate soi materials . the masses of the three dominant ion species in the water vapor plasma , h2o + , ho + , and o + , are very close to each other , which overcome the problem of co - existence of o and 02 in oxygen plasma source . the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much , which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
    本論文創(chuàng)造性地采用水等離子體離子注入方式代替?zhèn)鹘y(tǒng)的氧離子注入方式來制備soi結(jié)構(gòu)材料，由于水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質(zhì)量數(shù)相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質(zhì)量數(shù)相差大而引起的氧在硅中的分布彌散，使注入硅后的氧射程分布相對集中，比較容易退火后形成soi結(jié)構(gòu)材料。
  • The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol , naoh , sulfuric and oxygen plasma , were studied from microscopic view by atomic force microscopy , x - ray photoelectron spectroscopy and goniometer
    ( 1 )利用原子力顯微鏡、接觸角測試儀、紫外分光光度計(jì)從微觀角度研究了乙醇、氫氧化鈉、濃硫酸、氧等離子體處理對ito薄膜的表面性能和光電性能的影響。

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